P4C167 Datasheet | Pyramid Semiconductor Corporation

Features Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) - 10/12/15/20/25 ns (mercial) - 12/15/20/25/35 ns (Industrial) - 15/20/25/35/45 ns (Military) .. Separate Data I/O Three-State Output TTL patible Output Fully TTL patible Inputs Standard Pinout (JEDEC Approved) - 20-Pin 300 mil DIP - 20-Pin 300 mil SOJ - 20-Pin LCC Low Power Operation Single 5V±10% Power Supply Data Retention with 2.0V Supply (P4C167L Military) DESCRIPTION The P4C167/L are 16,384-bit high speed static RAMs organized as 16K x 1. The CMOS memories require no clocks or refreshing and have equal access and cycle times. The RAMs operate from a single 5V ± 10% tolerance power supply. Data integrity is maintained for supply voltages down to 2.0V, typically drawing 10µA. Access times as fast as 10 nanoseconds are available, greatly enhancing system speeds. CMOS reduces power consumption to low levels. The P4C167/L are available in 20-pin 300 mil DIP, 20-pin 300 mil SOJ, and 20-pin LCC packages providing excellent board level densities. FUNCTIONAL BLOCK DIAGRAM PIN CONFIGURATIONS DIP (P2, C6) SOJ (J2) SIMILAR LCC (L9) Document # SRAM106 REV A 1 Revised October 2005 MAXIMUM RATINGS(1) Symbol VCC Parameter Power Supply Pin with Respect to GND Terminal Voltage with Respect to GND (up to 7.0V) Operating Temperature Value - 0.5 to +7 - 0.5 to VCC +0.5 - 55 to +125 Unit V Symbol TBIAS TSTG PT IOUT Parameter Temperature Under Bias Storage Temperature Power Dissipation DC Output Current Value - 55 to +125 - 65 to +150 1.0 50 Unit °C °C W m A VTERM TA V °C REMENDED OPERATING TEMPERATURE AND SUPPLY VOLTAGE Grade(2) .. CAPACITANCES(4) VCC = 5.0V, TA = 25°C, f = 1.0MHz Symbol CIN COUT Parameter Input Capacitance Output Capacitance Conditions Typ. Unit VIN = 0V VOUT = 0V 5 7 p F p F Ambient Temperature GND 0V 0V 0V VCC 5.0V ± 10% 5.0V ± 10% 5.0V ± 10% Military - 55°C to +125°C - 40°C to +85°C Industrial 0°C to +70°C mercial DC ELECTRICAL CHARACTERISTICS Over remended operating...